13007A TRANSISTOR PDF

STIA NTE Equivalent NTE TRANSISTOR NPN SILIC Orders for 23 or more ship same day or within 48Hrs. (Factory Drop Ship) Smaller orders ship. ST NPN Silicon Transistor for high voltage, high-speed power switching application. Parameter Collector Base Voltage Collector Emitter Voltage Emitter. Power Transistor. For Switching Power Supply Applications. The MJE is designed for high−voltage, high−speed power switching inductive circuits where .

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Upon reasonable advance written notice, ON Semiconductor shall have the right no more frequently than once in any 12 month period during the term of the Transistro, through an independent third party approved by Licensee in writing such approval not to be unreasonably withheldto examine and audit such records and Licensee’s compliance with the terms of Section 2. Previously Viewed Products Select Product Getting started with eDesignSuite.

MJE A, V NPN Bipolar Power Transistor

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The parties hereto are for 1300a purposes of this Agreement independent contractors, and neither shall hold itself out as having any authority to act as an agent or partner of the other party, or in any way bind or commit the other party to any obligations. Limited Engineering samples available Preview: The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

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Failure by either party hereto to enforce any term of this Agreement shall not be held a tranistor of such term nor prevent enforcement of such term thereafter, unless and to the extent expressly set forth in a writing signed by the party charged with such waiver. They use a Cellular Emitter structure to enhance switching speeds. Nothing in this Agreement shall be construed transostor creating a joint venture, agency, partnership, trust or other similar association of any kind between the parties hereto.

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13007 Datasheet, Equivalent, Cross Reference Search

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