BUK456-60A DATASHEET PDF

BUKA datasheet, BUKA circuit, BUKA data sheet: PHILIPS – PowerMOS transistor,alldatasheet, datasheet, Datasheet search site for. MAX. MAX. UNIT field effect power transistor in a plastic envelope. BUK . This data sheet contains target or goal specifications for product development. Philips Semiconductors Product Specification PowerMOS transistor BUKA /B GENERAL DESCRIPTION N-channel enhancement mode field-effect power.

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Where application information is given, it is advisory and does not form part of the specification. TOAB; pin 2 connected to mounting base.

Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Dataseet from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN.

BUK452-100A MOSFET. Datasheet pdf. Equivalent

Philips customers using or selling these products for bhk456-60a in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

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Reproduction in whole or in part is prohibited without the prior written consent of the. Normalised drain-source on-state resistance.

Datasheet транзисторов

This data sheet contains final product specifications. These are stress ratings only and. Typical turn-on gate-charge characteristics.

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Publication thereof does not datashert nor imply any license under patent or other industrial or intellectual property rights.

Typical reverse diode current. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. This data sheet contains target or goal specifications for product development. Stress datsaheet one or more of the limiting dayasheet may cause permanent damage to the device.

April 6 Rev 1. Stress above one or more of the limiting values may cause permanent damage to the device.

BUKA Datasheet(PDF) – NXP Semiconductors

No liability will be accepted by the publisher for any consequence of its use. This data sheet contains final product specifications. The information presented in this document does not form part of any quotation or contract, it is believed to be. No liability will be accepted by the publisher for any consequence of its use.

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Philips Semiconductors BUK Series Datasheets. BUKB, BUKH, BUKA Datasheet.

No liability will be accepted by the publisher for any. Normalised continuous drain current. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. April 7 Rev 1. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

C April 2 Rev 1. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Exposure to limiting values for extended periods may affect device reliability. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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